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MT3S113TU Datasheet, Toshiba Semiconductor

MT3S113TU transistor equivalent, silicon-germanium npn epitaxial planar type transistor.

MT3S113TU Avg. rating / M : 1.0 rating-11

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MT3S113TU Datasheet

Features and benefits


* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0..

Application

FEATURES
* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz) 2.1±0..

Image gallery

MT3S113TU Page 1 MT3S113TU Page 2 MT3S113TU Page 3

TAGS

MT3S113TU
Silicon-Germanium
NPN
Epitaxial
Planar
Type
Transistor
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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