MT3S111TU transistor equivalent, silicon-germanium npn epitaxial planar type transistor.
* Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)
* High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz)
2.0±0.1 0.65±0.05
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
1
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