MT3S111P transistor equivalent, silicon-germanium npn epitaxial planar type transistor.
* Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)
* High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)
Unit: mm
Marking
R5
Absolute Maximum Ratings (Ta = 25°C)
Char.
Features
* Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)
* High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)
Unit: .
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