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MT3S113 Datasheet, Toshiba Semiconductor

MT3S113 transistor equivalent, silicon-germanium npn epitaxial planar type transistor.

MT3S113 Avg. rating / M : 1.0 rating-11

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MT3S113 Datasheet

Features and benefits


* Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Rating.

Application

MT3S113 Unit: mm FEATURES
* Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2=11.8dB (typ.) (@ .

Image gallery

MT3S113 Page 1 MT3S113 Page 2 MT3S113 Page 3

TAGS

MT3S113
Silicon-Germanium
NPN
Epitaxial
Planar
Type
Transistor
MT3S111
MT3S111P
MT3S111TU
Toshiba Semiconductor

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