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2SK2613
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) · High forward transfer admittance: ïYfsï = 6.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) · Enhancement-model: Vth = 2.0~4.
K2613 Datasheet
