TPN1R603PL - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TPN1R603PL
Manufacturer	Toshiba
File Size	526.98 KB
Description	Silicon N-channel MOSFET
Datasheet	TPN1R603PL Datasheet
Additional preview pages of the TPN1R603PL datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ. ) (3) Small output charge: Qoss = 23 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1R603PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-08 2016-08-25 Rev.1.0.

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Published: Aug 7, 2019 |