TH58NYG4S0FBAID e2prom equivalent, 16 gbit (2g x 8 bit) cmos nand e2prom.
* Organization
x8
Memory cell array 4328 × 256K × 8 × 2
Register
4328 × 8
Page size
4328 bytes
Block size
(256K + 14.5K) bytes
* Modes Read, Reset, Auto.
such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.
The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which al.
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