TH58NVG3D4BTG00 datasheet, e2prom equivalent, Toshiba

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Features and benefits

* Organization Memory cell array Register Page size Block size TH58NVG3D4B 2112 × 256K × 8 × 2 2112 × 8 2112 bytes (256K + 8K) bytes
* Modes Read, Reset, Auto P.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TH58NVG3D4B is a single 3.3 V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 4096blocks. The device has a 2112-byte static register which allow .

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