TH58NVG2S3BTG00 datasheet, eprom equivalent, Toshiba

Features and benefits

* Organization TH58NVG2S3B 2112 × 128K × 8 × 2 2112 × 8 2112 bytes (128K + 4K) bytes Memory cell array www.DataSheet4U.com Register Page size Block size
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Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

Lead-Free The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks. The device has a 2112-byte static register wh.

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