• Part: HN1D03FU
  • Description: Silicon Epitaxial Planar Type Diode
  • Manufacturer: Toshiba
  • Size: 510.22 KB
Download HN1D03FU Datasheet PDF
HN1D03FU page 2
Page 2
HN1D03FU page 3
Page 3

Datasheet Summary

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application - AEC-Q101 Qualified (Note1) - Built in anode mon and cathode mon. Note1: For detail information, please contact our sales Unit: mm Unit 1 - Low forward voltage - Fast reverse recovery time - Small total capacitance Unit 2 - Low forward voltage - Fast reverse recovery time - Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 pF (typ.) Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: CT = 2.2 pF (typ.) Unit 1, Unit 2 mon...