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HN1D03FU - Silicon Epitaxial Planar Type Diode

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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU HN1D03FU Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Built in anode common and cathode common. Note1: For detail information, please contact our sales Unit: mm Unit 1  Low forward voltage  Fast reverse recovery time  Small total capacitance Unit 2  Low forward voltage  Fast reverse recovery time  Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 pF (typ.) Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: CT = 2.2 pF (typ.
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