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HN1D01FE - Silicon Epitaxial Planar Type Diode

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Datasheet Details

Part number HN1D01FE
Manufacturer Toshiba
File Size 241.94 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet HN1D01FE Datasheet
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Other Datasheets by Toshiba
  • HN1D01F - Silicon Epitaxial Planar Type Diode
  • HN1D01FU - Silicon Epitaxial Planar Type Diode
  • HN1D02F - Silicon Epitaxial Planar Type Diode
  • HN1D02FE - Silicon Epitaxial Planar Type Diode
  • HN1D02FU - Silicon Epitaxial Planar Type Diode
  • HN1D03F - Silicon Epitaxial Planar Type Diode
  • HN1D03FU - Silicon Epitaxial Planar Type Diode
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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) HN1D01FE Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P 80 V 300* mA 100* mA 2* A 100** mW 1. CATHODE 2. CATHODE 3. ANODE 4. CATHODE 5. CATHODE 6.
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