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HN1D02F - Silicon Epitaxial Planar Type Diode

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Part number HN1D02F
Manufacturer Toshiba
File Size 350.22 KB
Description Silicon Epitaxial Planar Type Diode
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HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Ultra High Speed Switching Application Unit: mm  The HN1D02F is composed of two (2) cathode common units.  Low forward voltage : VF (3) = 0.90 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.9 pF (typ.
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