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HN1D03F - Silicon Epitaxial Planar Type Diode

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Datasheet Details

Part number HN1D03F
Manufacturer Toshiba
File Size 465.58 KB
Description Silicon Epitaxial Planar Type Diode
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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F HN1D03F Ultra High Speed Switching Application  Built in anode common and cathode common. Unit 1  Low forward voltage  Fast reverse recovery time  Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 pF (typ.) Unit 2  Low forward voltage  Fast reverse recovery time  Small total capacitance Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: CT = 2.2 pF (typ.
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