TDM3466 mosfet equivalent, n-channel enhancement mode mosfet.
* RDS(ON) < 2.45mΩ @ VGS=4.5V
RDS(ON) < 1.9mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired
* Surface M.
GENERAL FEATURES
* RDS(ON) < 2.45mΩ @ VGS=4.5V
RDS(ON) < 1.9mΩ @ VGS=10V
* High Power and current ha.
The TDM3466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* RDS(ON) < 2.45mΩ @ VGS.
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