TDM3411 mosfet equivalent, 2n and 2p-channel enhancement mode mosfet.
* N CHANNEL RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V
* P CHANNEL RDS(ON) < 43mΩ @ VGS=‐4.5V RDS(ON) < 33mΩ @ VGS=‐10V
* High Power and curren.
GENERAL FEATURES
* N CHANNEL RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V
* P CHANNEL RDS(ON) < 43m.
The TDM3411 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* N CHANNEL RDS(ON) < 35mΩ @ .
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