TDM3415 mosfet equivalent, p-channel enhancement mode mosfet.
* ‐30V/‐17.6A
* RDS(ON) < 15mΩ @ VGS=‐4.5V
RDS(ON) < 9mΩ @ VGS=‐10V
* Reliable and Rugged
* HBM ESD capability level of 8KV typical
* Lead free .
GENERAL FEATURES
* ‐30V/‐17.6A
* RDS(ON) < 15mΩ @ VGS=‐4.5V
RDS(ON) < 9mΩ @ VGS=‐10V
* Reliable and Ru.
The TDM3415 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* ‐30V/‐17.6A
* RDS(ON) < 1.
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