TDM3407 mosfet equivalent, p-channel enhancement mode mosfet.
* ‐40V PMOS
* RDS(ON) < 17mΩ @ VGS=‐4.5V
RDS(ON) < 11mΩ @ VGS=‐10V RDS(ON) < 9.5mΩ @ VGS=‐20V
* Reliable and Rugged
* HBM ESD protection level pass .
GENERAL FEATURES
* ‐40V PMOS
* RDS(ON) < 17mΩ @ VGS=‐4.5V
RDS(ON) < 11mΩ @ VGS=‐10V RDS(ON) < 9.5mΩ @ VGS=.
The TDM3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* ‐40V PMOS
* RDS(ON) < 17mΩ @ VGS=‐4.5.
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