Datasheet4U Logo Datasheet4U.com

MMBT8550 - SMD General Purpose Transistor

Description

MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction

Features

  • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.

📥 Download Datasheet

Datasheet Details

Part number MMBT8550
Manufacturer TAITRON
File Size 334.43 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT8550 Datasheet
Other Datasheets by TAITRON

Full PDF Text Transcription

Click to expand full text
SMD General Purpose Transistor (PNP) Features  PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT8550 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 556 °C /W PD Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.
Published: |