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MMBT8050 - SMD General Purpose Transistor

General Description

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Junction Temperature Storage Temp

Key Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Datasheet Details

Part number MMBT8050
Manufacturer TAITRON
File Size 185.51 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT8050 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8050 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCEO VCBO VEBO IC PD RθJA PD RθJA TJ TSTG Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range MMBT8050 25 40 5.0 1.5 225 1.8 556 300 2.