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MMBT8098 - SMD General Purpose Transistor

General Description

MMBT8098 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KA 60 V 60 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derat

Key Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Datasheet Details

Part number MMBT8098
Manufacturer TAITRON
File Size 173.94 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT8098 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8098 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8098 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KA 60 V 60 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C /W Ptot Power Dissipation (Note 2) 300 mW TA=25 ˚C 2.