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MMBT8550 (2A) PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.
The transistor is subdivided into two groups C And D according to its DC current gain.
1.Base 2.Emitter 3.Collector SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
-VCBO -VCEO -VEBO
-IC Ptot Tj TS
Value 40 25 6 2 350 150
- 55 to + 150
Unit V V V A
mW OC OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at -VCE = 1 V, -IC = 5 mA at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 1.
MMBT8550 Datasheet
