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SSF3051G7 - MOSFET

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • Advanced trench MOSFET process technology.
  • Special designed for buttery protection, load switching and general power management.
  • Ultra low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • 150℃ operating temperature SSF3051G7  3051G7 D G Marking and pin Assignment  S Schematic diagram       .

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Datasheet Details

Part number SSF3051G7
Manufacturer Silikron Semiconductor
File Size 564.14 KB
Description MOSFET
Datasheet download datasheet SSF3051G7 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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                                 Main Product Characteristics: VDSS -30V RDS(on) 45mohm(typ.) ID -4A SOT23-6  Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for buttery protection, load switching and general power management „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF3051G7  3051G7 D G Marking and pin Assignment  S Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
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