SSF2816EB datasheet, mosfet equivalent, Silikron Semiconductor

Features and benefits

* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM
* High Power and cu.

Application

that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.

Description

The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. SSF2816EB GENERAL FEATURES
* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS.

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