SSF2810EH2 mosfet equivalent, mosfet.
TSSOP-8
* Advanced MOSFET process technology
* Ultra low on-resistance with low gate charge
* High Power and current handing capability
* 150℃ operatin.
Absolute Max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS TJ TSTG
Parameter Continuous Dr.
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.
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