SSF2816EB mosfet equivalent, dual n-channel mosfet.
* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2500V HBM
* High Power and cu.
*Battery protection
*Load switch
*Power management
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PACKAGE MARKING AND ORDERING INFORMATI.
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.
SSF2816EB
20V Dual N-Channel MOSFET
GENERAL FEATURES
* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS.
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