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SSF2N60 - N-Channel enhancement mode power field effect transistors

Description

These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology.

Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching dan gene ral pur pose.

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Datasheet Details

Part number SSF2N60
Manufacturer Silikron
File Size 516.60 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSF2N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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                                 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220    Marking and pin Assignm ent  Schematic dia gram  Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching dan gene ral pur pose applications „ Ultra low on-r esistance with low gate charg e „ Fastswitching and re verse b ody reco very „ 150 ℃ operati ng temperatur e       Description: These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and commutation mode.
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