SSF2N60 transistors equivalent, n-channel enhancement mode power field effect transistors.
* Advanced Process Technology
* Special designed for PWM, load switching dan gene ral pur pose applications
* Ultra low on-r esistance with low gate charg e .
* Ultra low on-r esistance with low gate charg e
* Fastswitching and re verse b ody reco very
* 150 ℃ operat.
These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching per.
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