SSF2112H2 datasheet, mosfet equivalent, Silikron

Features and benefits

* Advanced trench MOSFET process technology
* Special designed for buttery protection, load switching and general power management
* Ultra low on-resistance .

Application

Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Vo.

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use .

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