SSF2160G4
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications.
Key Features
- Advanced trench MOSFET process technology
- Special designed for buttery protection, load switching and general power management
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
- Lead free product SSF2160G4 20V N-Channel MOSFET 21S6205G4 Marking and Pin Assignment
