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SSF2102 - N-Ch Enhancement Mode Power MOSFET

General Description

The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING TS2 SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 REF. G H J K L Millimeter Min. Max. 0.1 REF. 0.