Datasheet4U Logo Datasheet4U.com

SSF1321P - P-Channel MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SOT-323 saves board space.
  • Fast switching speed.
  • High performance trench technology. SOT-323 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 REF. G H J K L Millimeter Min. Max. 0.1 REF. 0.525 REF. 0.08 0.25 0.8 TYP. 0.65 TYP.

📥 Download Datasheet

Datasheet preview – SSF1321P

Datasheet Details

Part number SSF1321P
Manufacturer SeCoS
File Size 483.68 KB
Description P-Channel MOSFET
Datasheet download datasheet SSF1321P Datasheet
Additional preview pages of the SSF1321P datasheet.

📁 Similar Datasheet

Other Datasheets by SeCoS

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SSF1321P -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOT-323 saves board space.  Fast switching speed.  High performance trench technology. SOT-323 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min.
Published: |