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VNDQ03 - N-Channel Enhancement-Mode MOSFET

Features

  • Low rDS(on) < 3 . n TYPE Single Quad.

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Datasheet Details

Part number VNDQ03
Manufacturer Siliconix
File Size 239.53 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDQ03 Datasheet

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VNDQ06 N-Channel Enhancement-Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~SilicDnix ~ incorporated VNDQ03 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • Low rDS(on) < 3 .n TYPE Single Quad PACKAGE DEVICE TO-20SAD • VN0300B TO-92 • VN0300L TO-237 • YN0300M 14-Pin Plastic • YQ1001J 14-Pin Dual-In- Line II YQ1001P Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Souroe Pad 0.007 (0.1778) .lLQ..1.Q.. (0.254) T0.038 1 •(0.965) 7-123 VNDQ03 TYPICAL CHARACTERISTICS Output Characteristics 2.0 v s= 10 V 6V /1.S / 1.2 TJ = 2SoC SV 10 (A) O.B " 'F 0.4 4V 3V 2V 0 0 4 8 12 16 20 Vos (V) ~SilicDnix ~ incorporated . Ohmic Region Characteristics ,I2.0 TJ = 2SoC /7V Va1l= 10 V I 1 V1.6 100-"" /'r' 1.2 10 (A) O.B VI / -,Vi LI-IIV/' '{flY 0.
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