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VNDQ12
.rY"Siliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
• Switching • Amplification
FEATURES • Low rOSlon) < 4.5 n
TYPE Single
PACKAGE
DEVICE
TO-205AD • VN1206B
TO-220 • VN1206D
TO-237 • VN1206M, VN1210M
TO-S2 • VN1206L, VN1210L
Chip
• Available as above specifications
GEOMETRY DIAGRAM
Gate Pad 0.010 (0.254) 0.0087 (0.2209)
Source Pad 0.0070 (0.1778) .-JW..Q. (0.254)
7-138
T 0.038 (0.965)
1
~SilicDnix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
2.0
rr~ VGS - 10 V
1.6
V1.2
10 (A) O.B
7V 6V 5V
4V
0.4 3V
2V 0
0 20 40 60 BO Vos (V)
100
VNDQ12
Ohmic Region Characteristics
1000
VVGS= 10V./
BOO
600 10 (mA) 400
6V V
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