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VNDQ09 - N-Channel Enhancement-Mode MOSFET

Features

  • . nII Low rDS(on) < 4 TYPE Single Quad.

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Datasheet Details

Part number VNDQ09
Manufacturer Siliconix
File Size 257.47 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDQ09 Datasheet

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Full PDF Text Transcription

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~SilicDnix ~ incorporated VNDQ09 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: GI Switching • Amplification FEATURES .nII Low rDS(on) < 4 TYPE Single Quad PACKAGE DEVICE TO-20SAD • VN90AB 2N6661 TO-92 • VNOBOBL TO-237 • VNOBOBM TO-220SD • VNBBAFD TO-220 • VNBBAD 14-Pin Plastic • VQ1006J 14-Pin Dual-In- Line e VQ1004P GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) MQl!L (0.2209) Source Pad 0.0070 (0.1778) ~ (0.254) T 0.038 (0.965) 1 III 7-133 VNDQ09 TYPICAL. CHARACTERISTICS Output Characteristics I1.25 V~s =10 ~ 1.00 { 0.75 10 (A) 0.50 0.25 rt SV 5V 4V 3V _ 2V a a 10 20 30 40 50 VOS (V) ~SiliCDnix ~ incorporated Ohmic Region Characteristics 1.0 TJ =25°C VGs= 10~ 4=- L""O.B / ~ J._ / ~ 5V VVO.S / ~~ 4V 10 (A) 0.4 ~ ~ ~ i""""'" j~ ", ~~ 0.
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