SVT120N08T datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 120A,80V, RDS(on)(typ.)=7mΩ@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability ORDERING INFORMATION Part No. SVT120.

Description

SVT120N08T/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior .

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