* 180A, 40V, RDS(on)(typ.)=2.6m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 23.

2 S1 8D SVT043R0NT/L5 is an N-channel enhancement mode power MOS S2 7D field effect transistor which is produced using Silan's LVMOS 1 S3 6D technology. The improved process and cell structure have been G4 5D especially tailored to minim.

SVT043R0NT

SVT041R7NT

SVT042R5NL5

SVT042R5NT

SVT044R5ND

SVT044R5NL5

SVT044R5NT

SVT03100ND

SVT03100NL3

SVT03110PL3

SVT03120NL2

SVT03380PSA

SVT033R5NAT

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