SVT044R5NT datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

* 178A,40V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source.

Description

SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior sw.

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