SVT041R7NT mosfet equivalent, n-channel mosfet.
* 195A, 40V, RDS(on)(typ.)=1.4m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Extreme dv/dt rated
* 100% avalanche tested
* Pb-free.
SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior sw.
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