SVT033R5NAT mosfet equivalent, n-channel mosfet.
* 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability
2 1
3 1.Gate 2.Drain 3.Source
1 23 T.
The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superi.
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