SVT033R5NAT datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

* 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 T.

Description

The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superi.

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