* 180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATI.

The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superio.

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