Datasheet Summary
HCD65R600S_HCU65R600S
June 2015
HCD65R600S / HCU65R600S
650V N-Channel Super Junction MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ = 0.54 ȍ
ID = 7.3 A
D-PAK I-PAK
1 1
32 3
HCD65R600S HCU65R600S 1.Gate 2. Drain 3....