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HCD65R360S_HCU65R360S
June 2015
HCD65R360S / HCU65R360S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ ȍ
ID = 11 A
D-PAK I-PAK
2
1 1
32 3
HCD65R360S HCU65R360S 1.Gate 2. Drain 3.
HCU65R360S Datasheet
