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HCD6N70S_HCU6N70S
June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
BVDSS = 700 V RDS(on) typ ȍ ID = 3.0 A
D-PAK I-PAK
2
1 3
HCD6N70S
1
2 3
HCU6N70S
1.Gate 2. Drain 3.
HCU6N70S Datasheet
