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HCU70R1K4P - 700V N-Channel Super Junction MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 7.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.15 ȍ(Typ. ) @VGS=10V ‰ 100% Avalanche Tested Jan 2015 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS.

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Datasheet Details

Part number HCU70R1K4P
Manufacturer SemiHow
File Size 318.62 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCU70R1K4P Datasheet

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Full PDF Text Transcription

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HCU70R1K4P HCU70R1K4P 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 7.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested Jan 2015 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A I-PAK 1 2 3 1.Gate 2. Drain 3.
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