HCU7N70S - N-Channel MOSFET

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ7S#9GS=10V 100% Avalanche Tested Sep 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS D.

SemiHow

Datasheet Details

Part number	HCU7N70S
Manufacturer	SemiHow
File Size	287.54 KB
Description	N-Channel MOSFET
Datasheet	HCU7N70S Datasheet

📁 Similar Datasheet

Other Datasheets by SemiHow

HCU70R1K4P - 700V N-Channel Super Junction MOSFET
HCU70R1K5E - 700V N-Channel Super Junction MOSFET
HCU70R600S - 700V N-Channel Super Junction MOSFET
HCU70R700T - 700V N-Channel Super Junction MOSFET
HCU70R950T - 700V N-Channel Super Junction MOSFET
HCU65R360S - 650V N-Channel Super Junction MOSFET
HCU65R600S - 650V N-Channel Super Junction MOSFET
HCU65R660S - 650V N-Channel Super Junction MOSFET

Full PDF Text Transcription

Click to expand full text

HCU7N70S HCU7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ7S#9GS=10V 100% Avalanche Tested Sep 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 700 5.0 3.2 13.

Published: Apr 14, 2017 |