NPN Triple Diffused Planar Silicon Transistor
400V/4A Switching Regulator Applications
· High breakdown voltage.
· High reliability.
· Fast switching speed (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Absolute Maximum Ratings at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
PW≤300µs, duty cycle≤10%
Collector Cutoff Current
ICBO VCB=400V, IE=0
Emitter Cutoff Current
IEBO VEB=5V, IC=0
hFE1* VCE=5V, IC=0.4A
DC Current Gain
hFE2 VCE=5V, IC=2A
hFE3 VCE=5V, IC=10mA
* : The hFE1 of the 2SC4160 is classified as follows.
When specifying the hFE1 rank, specify two or more ranks in principle.
15 to 30
–55 to +150
min typ max
Continued on next page.
20 to 40
30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2500TS (KOTO)/D0198HA (KT)/3267TA, TS No.2481–1/4