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Sanyo Electric Components Datasheet

C4162 Datasheet

2SC4162

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Ordering number:ENN2483A
NPN Triple Diffused Planar Silicon Transistor
2SC4162
400V/10A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· High-speed switching (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SC4162]
10.0
3.2
4.5
2.8
Specifications
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
Ratings
500
400
7
10
20
35
150
55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.6A
VCE=5V, IC=8A
VCE=5V, IC=10mA
10 µA
10 µA
15* 50*
10
10
Continued on next page.
* : The hFE1 of the 2SC4162 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
L
M
N
hFE 15 to 30 20 to 40 30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/D0198HA (KT)/3267TA, TS No.2483–1/4


Sanyo Electric Components Datasheet

C4162 Datasheet

2SC4162

No Preview Available !

2SC4162
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
VCE=10V, IC=1.6A
VCB=10V, f=1MHz
IC=6A, IB=1.6A
IC=6A, IB=1.6A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=4.5A, IB1=0.45A, IB2=1.8A, L=500µH, clamped
IC=7A, IB1=1.4A, IB2=2.8A, RL=28.6,
VCC=200V
IC=7A, IB1=1.4A, IB2=2.8A, RL=28.6,
VCC=200V
IC=7A, IB1=1.4A, IB2=2.8A, RL=28.6,
VCC=200V
Ratings
min typ
20
120
500
400
7
400
max
0.8
1.5
Unit
MHz
pF
V
V
V
V
V
V
0.5 µs
2.5 µs
0.3 µs
PW=20µs
duty factor1%
INPUT
IB1 RB
IB2
VR
50+
100µF
VBE=--5V
OUTPUT
RL
+
470µF
VCC=200V
IC -- VCE
10
8 1000mA900m80A07m006Am00AmA
500mA
6 400mA
300mA
200mA
4
100mA
2
IB=0
0
0 2 4 6 8 10
Collector-to-Emitter Voltage, VCE V ITR06410
hFE -- IC
100
VCE=5V
7
Ta=120°C
5
3 25°C
2
--40°C
10
7
5
5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC A
5 7 10
ITR06412
IC -- VBE(on)
10
VCE=5V
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter ON-State Voltage, VBE(on) V ITR06411
VCE(sat) -- IC
1.0
IC / IB=5
7
5
3
2
0.1
7
5
5 7 0.1
Ta=12205°C°-C-40°C
2 3 5 7 1.0
23
Collector Current, IC A
5 7 10
ITR06413
No.2483–2/4


Part Number C4162
Description 2SC4162
Maker Sanyo
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C4162 Datasheet PDF






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