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Sanyo Electric Components Datasheet

C4161 Datasheet

NPN Triple Diffused Planar Silicon Transistor

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Ordering number:ENN2482
NPN Triple Diffused Planar Silicon Transistor
2SC4161
400V/7A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· High-speed switching (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SC4161]
10.0
3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
2.55
2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
500
400
7
7
14
3
2
30
150
55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Conditions
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
Ratings
min typ max
Unit
10 µA
10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/D0198HA (KT)/3267TA, TS No.2482–1/4


Sanyo Electric Components Datasheet

C4161 Datasheet

NPN Triple Diffused Planar Silicon Transistor

No Preview Available !

2SC4161
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min typ
hFE1 VCE=5V, IC=0.8A
15*
DC Current Gain
hFE2 VCE=5V, IC=4A
10
hFE3 VCE=5V, IC=10mA
10
Gain-Bandwidth Product
fT VCE=10V, IC=0.8A
Output Capacitance
Cob VCB=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=4A, IB=0.8A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=4A, IB=0.8A
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=1mA, IE=0
500
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=5mA, RBE=
400
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=1mA, IC=0
7
Collector-to-Emitter Sustain Voltage
VCEX(sus) IC=3A, IB1=0.3A, IB2=1.2A, L=1mH, clamped
400
Turn-ON Time
ton IC=5A, IB1=1A, IB2=2A, RL=40, VCC=200V
Storage Time
tstg IC=5A, IB1=1A, IB2=2A, RL=40, VCC=200V
Fall Time
tf IC=5A, IB1=1A, IB2=2A, RL=40, VCC=200V
* : The hFE1 of the 2SC4161 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
20
80
max
50*
0.8
1.5
0.5
2.5
0.3
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Switching Time Test Circuit
PW=20µs
duty factor1%
INPUT
IB1
RB
IB2
VR
50+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
IC -- VCE
10
8 700mA 800mA 900mA 1000mA
600mA
500mA
6 400mA
300mA
4 200mA
100mA
2
0 IB=0
0 2 4 6 8 10
Collector-to-Emitter Voltage, VCE V ITR06401
IC -- VBE(on)
8
VCE=5V
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter ON-State Voltage, VBE(on) V ITR06402
No.2482–2/4


Part Number C4161
Description NPN Triple Diffused Planar Silicon Transistor
Maker Sanyo Semiconductor Corporation
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C4161 Datasheet PDF






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