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C4161 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

  • High breakdown voltage, high reliability.
  • High-speed switching (tf=0.1µs typ).
  • Wide ASO.
  • Adoption of MBIT process.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curren.

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Datasheet Details

Part number C4161
Manufacturer Sanyo Semiconductor Corporation
File Size 35.79 KB
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet download datasheet C4161 Datasheet
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Full PDF Text Transcription

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Ordering number:ENN2482 NPN Triple Diffused Planar Silicon Transistor 2SC4161 400V/7A Switching Regulator Applications Features · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCEO VEBO IC ICP IB Conditions PW≤300µs, duty cycle≤10% Collector Dissipation Junction Temperature Storage Temperature PC Tc=25˚C Tj Tstg 2.4 14.
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