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Sanyo Electric Components Datasheet

C4163 Datasheet

2SC4163

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Ordering number:ENN2484B
NPN Triple Diffused Planar Silicon Transistor
2SC4163
400V/12A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· High-speed switching (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SC4163]
10.0
3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
2.55
2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
500
400
7
12
25
4
2
40
150
55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Conditions
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
Ratings
min typ max
Unit
10 µA
10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/D0198HA (KT)/3267TA, TS No.2484–1/4


Sanyo Electric Components Datasheet

C4163 Datasheet

2SC4163

No Preview Available !

2SC4163
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min typ
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
VCE=5V, IC=1.6A
VCE=5V, IC=8A
VCE=5V, IC=10mA
VCE=10V, IC=1.6A
VCB=10V, f=1MHz
IC=8A, IB=1.6A
IC=8A, IB=1.6A
IC=1mA, IE=0
IC=10mA, RBE=
IE=1mA, IC=0
IC=6A, IB1=0.6A, IB2=2.4A, L=500µH, clamped
IC=10A, IB1=2A, IB2=4A, RL=20, VCC=200V
IC=10A, IB1=2A, IB2=4A, RL=20, VCC=200V
IC=10A, IB1=2A, IB2=4A, RL=20, VCC=200V
15*
10
10
20
160
500
400
7
400
* : The hFE1 of the 2SC4163 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
L
M
N
hFE 15 to 30 20 to 40 30 to 50
max
50*
0.8
1.5
0.5
2.5
0.3
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=20µs, duty factor 1%
IB1
RB
OUTPUT
INPUT
50
VR
IB2
+
RL
+
100µF
VBE= --5V
IC -- VCE
20
16
2000mA
12
1800mA
1600mA
1400mA 1200mA
1000mA
800mA
600mA
8 400mA
200mA
4
470µF
VCC=200V
12
10
8
6
4
2
IC -- VBE(on)
VCE=5V
0
0
100
7
5
IB=0
2 4 6 8 10
Collector-to-Emitter Voltage, VCE V ITR06420
hFE -- IC
VCE=5V
Ta=120°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter ON-State Voltage, VBE(on) V ITR06421
VCE(sat) -- IC
1.0
IC / IB=5
7
5
3 25°C
3
2
--40°C
2 25°C
10
7
5
0.1
2 3 5 7 1.0
2 3 5 7 10
2
Collector Current, IC A
ITR06422
0.1
7
5
0.1
23
5 7 1.0
23
5 7 10
2
Collector Current, IC A
ITR06423
No.2484–2/4


Part Number C4163
Description 2SC4163
Maker Sanyo
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C4163 Datasheet PDF






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