SW8N65K mosfet equivalent, n-channel mosfet.
* High ruggedness
* Low RDS(ON) (Typ 0.53Ω)@VGS=10V
* Low Gate Charge (Typ 20nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* Application.
This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalan.
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