SW8N60D mosfet equivalent, n-channel mosfet.
TO-262
TO-220F
* High ruggedness
* Low RDS(ON) (Typ 0.92Ω)@VGS=10V
* Low Gate Charge (Typ 29nC)
* Improved dv/dt Capability
* 100% Avalanche Tested.
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially ex.
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